STB5NB60

www.DataSheet4U.com ® STB5NB60 N - CHANNEL 600V - 1.8Ω - 5A - I2PAK/D2PAK PowerMESH™ MOSFET TYPE ST B5NB60 s s s s s V DSS 600 V R DS(on) < 2.0 Ω ID 5 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 12 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ I2PAK D2PAK process, STMicroelectronics has designed an TO-262 TO-263 advanced family of power MOSFETs with (Suffix ”T4”) (suffix ”-1”) outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. DataSheet4U.com APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE DataShee ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 600 600 ± 30 5 3.1 20 100 0.8 4.5 -65 to 150 150 ( 1) ISD ≤ ...