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STB55NE06

Part Number	STB55NE06
Manufacturer	ST Microelectronics
Description	N-CHANNEL POWER MOSFET
Published	Jul 15, 2006
Detailed Description	com STB55NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST B55NE06 s s s ...
Datasheet	STB55NE06 PDF File

Overview

com STB55NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST B55NE06 s s s s s s V DSS 60 V R DS(on) < 0.
022 Ω ID 55 A s TYPICAL RDS(on) = 0.
019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process.
The resulting transistor shows extremely high packing density for low onINTERNAL SCHEMATIC DIAGRAM resistance, rugged avalance characteristics and DataSheet4U.
com less critical alignment steps the...

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