STB50NE10L

www.DataSheet4U.com ® STB50NE10L N - CHANNEL 100V - 0.020Ω - 50A - D2PAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STB50NE10L s s s s s V DSS 100 V R DS(on) <0.025 Ω ID 50 A s TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche INTERNAL SCHEMATIC DIAGRAM characteristics and less critical alignment steps DataSheet4U.com therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT s D2PAK TO-263 (suffix "T4") DataShee ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor dv/dt ( 1 ) Peak Diode Recovery voltage slope T stg Tj Storage Temperature Max. Operating Junction Temperature o o Value 100 100 ± 20 50 35 200 150 1 6 -65 to 175 175 (1) ISD ≤ 50 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR...