MPSA92

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA92/D High Voltage Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSA92 MPSA93 *Motorola Preferred Device * MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA92 –300 –300 –5.0 –500 625 5.0 1.5 12 – 55 to +150 MPSA93 –200 –200 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) DataShee DataSheet4U.com Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 m Adc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 m Adc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) (VCB = –160 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSA92 MPSA93 IEBO V(BR)CEO MPSA92 MPSA93 V(BR)CBO MPSA92 MPSA93 V(BR)EBO ICBO — — — –0.25 –0.25 –0.1 µAdc –300 –200 –5.0 — — — Vdc µAdc –300 –200 — — Vdc Vd...