(ST93C66 / ST93C67) 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM
www.DataSheet4U.com
ST93C66 ST93C67
4K (256 x 16 or 512 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
Figure 1. Logi...
Description
www.DataSheet4U.com
ST93C66 ST93C67
4K (256 x 16 or 512 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
Figure 1. Logic Diagram
DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V ± 10% and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). The 4K bit memory is divided into either 512 x 8 bit bytes or 256 x 16 bit words. The organization may be selected by a signal applied on the ORG input. Table 1. Signal Names
S D Chip Select Input Serial Data Input Serial Data Output Serial Clock Organisation Select Supply Voltage Ground
VCC
D C S ORG ST93C66 ST93C67
Q
VSS
AI01252B
ww.DataSheet4U.com
Q C ORG VCC VSS
July 1997
This is information on a product still in production bu t not recommended for new de signs.
1/13
www.DataSheet4U.com
www.DataSheet4U www.DataSheet4U.com 4U.com
DataSheet 4 U .com
www.DataSHeet4U.com
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST93C66 version – 3V to 5.5V for ST93C67 version SEQUENTIAL READ OPERATION 5ms...
Similar Datasheet