MRF898

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF898/D The RF Line NPN Silicon RF Power Transistor . . . designed for 24 Volt UHF large–signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850 – 960 MHz. Motorola Advanced Amplifier Concept Package Specified 24 Volt, 900 MHz Characteristics Output Power = 60 Watts Power Gain = 7.0 dB Min Efficiency = 60% Min Double Input/Output Matched for Wideband Performance and Simplified External Matching Series Equivalent Large–Signal Characterization Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Silicon Nitride Passivated Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF898 60 W, 850 – 960 MHz RF POWER TRANSISTOR NPN SILICON CASE 333A–02, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 30 55 4.0 10 175 1.0 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Max 1.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) ww.DataSheet4U.com Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown ...