MRF894

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF894/D The RF Line NPN Silicon RF Power Transistor . . . designed for 24 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM equipment operating in the range of 804 – 960 MHz. Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Power Gain = 7.0 dB Min Efficiency = 55% Min Series Equivalent Large–Signal Characterization Capable of 30:1 VSWR Load Mismatch at Rated Output Power and Supply Voltage Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Silicon Nitride Passivated MRF894 30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON CASE 319–07, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 30 50 4.0 7.0 115 0.66 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 1.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) ww.DataSheet4U.com Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector ...