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MRF838A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF838A is a Common Emitter Device Desig...
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MRF838A
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The MRF838A is a Common Emitter Device Designed for Class A, B and C Amplifier Applications up to 1.0 GHz.
PACKAGE STYLE .205 4L STUD
D
4
3
A
2 1
C
FEATURES INCLUDE:
Gold Metallization Emitter Ballasting High Gain
H
B
G F
E
#8-32UNC
J
DIM A B C D E F G H I J
M INIM UM
inches / m m
M AXIM UM
inches / m m
IC VCBO PDISS TJ TSTG θJC
600 mA 36 V 8.75 W @ TC = 25 C -65 Cto +200 C -65 Cto +200 C 20 C/W
O O O O O O
.976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 .161 / 4.100 .098 / 2.500 .200 / 5.100 .004 / 0.100 .425 / 10.800 .200 / 5.100
1.000 / 25.4000 1.000 / 25.4000 .031 / 0.800 .196 / 5.000 .110 / 2.800 .208 / 5.300 .006 / 0.150 .465 / 11.800 2.05 / 5.200
1 & 3 = EMITER 2 = BASE 4 = COLLECTOR
CHARACTERISTICS
SYMBOL
BVCES BVCEO IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 18 4.0
UNITS
V V V ---
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BVEBO hFE COB PG ηC
IC = 150 mA f = 1.0 MHz POUT = 1.0 W f = 870 MHz
20 7.5 6.5 50 7.5
VCB = 12.5 V VCE = 12.5 V
pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
REV. A
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Specifications are subject to change without notice.
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