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GT20J321

Toshiba Semiconductor

Silicon N-Channel IGBT


Description
www.DataSheet4U.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 µs (typ.) Low switching loss : Eon = 0.40 mJ (typ.) : Eoff...



Toshiba Semiconductor

GT20J321

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