MA114

www.DataSheet4U.com Rectifier Diodes MA2J114 (MA114) Silicon epitaxial planar type For small power rectification I Features Small S-mini type package, allowing high-density mounting High reverse voltage VR 1.25±0.1 0.35±0.1 0.7±0.1 Unit : mm 1 0 to 0.1 1.7±0.1 0.16+0.1 –0.06 5° Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s Symbol VR VRM IO IFRM IFSM Tj Tstg Rating 150 150 200 600 Unit V (0.15) 0 to 0.1 V mA mA 1 150 −55 to +150 A 1: Anode 2: Cathode SMini2-F1 Package Marking Symbol: 1E °C °C www.DataSheet4U.com Symbol IR VF Ct VR = 150 V IF = 200 mA VR = 0 V, f = 1 MHz 4.5 Conditions Min Typ Max 200 1.2 Unit nA V pF I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Note) Rated input/output frequency: 3 MHz Note) The part number in the parenthesis shows conventional part number. 0.4±0.1 I Absolute Maximum Ratings Ta = 25°C 2 0.5±0.1 5° DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com 2.5±0.2 219 www.DataSheet4U.com MA2J114 IF  V F 1 000 100°C 25°C 100 1.6 1.4 Rectifier Diodes VF  Ta 100 IR  V R Ta = 150°C 100°C 10 Forward current IF (mA) Forward voltage VF (V) Ta = 150°C 10 −20°C 1.2 1.0 0.8 0.6 0.4 0.2 10 mA 3 mA Reverse current IR (nA) IF = 200 mA 1 1 0.1 25°C 0.01 0.1 0.01 0 0.2 0.4 0.6 0.8 1....