RD06HVF1

www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 OUTLINE DRAWING RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. 4 FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz note(3) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 1 2 3 PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. :Copper of the ground work is exposed in case of frame separation. (3) RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) www.DataSheet4U.com RD06HVF1 MITSUBISHI ELECTRIC 1/8 10 Jan 2006 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain ...