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STP45NF06L

ST Microelectronics

N-Channel POWER MOSFET

www.DataSheet4U.com STP45NF06L STB45NF06L N-CHANNEL 60V - 0.022Ω - 38A TO-220 / D2PAK STripFET™ II POWER MOSFET TYPE ST...



STP45NF06L

ST Microelectronics


Octopart Stock #: O-549079

Findchips Stock #: 549079-F

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www.DataSheet4U.com STP45NF06L STB45NF06L N-CHANNEL 60V - 0.022Ω - 38A TO-220 / D2PAK STripFET™ II POWER MOSFET TYPE STP45NF06L STB45NF06L s s s VDSS 60 V 60 V RDS(on) < 0.028Ω < 0.028Ω ID 38 A 38 A TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE 3 1 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ±16 38 26 152 80 0.53 7 –55 to 175 (1) ISD ≤38A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C (q ) Pulse width limited by safe operating area September 2002 1/10 DataSheet 4 U .com www.DataSheet4U www....




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