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N-CHANNEL 60V - 0.022Ω - 38A TO-220 STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE STP45NF06
s s
STP...
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N-CHANNEL 60V - 0.022Ω - 38A TO-220 STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE STP45NF06
s s
STP45NF06
VDSS 60V
RDS(on) <0.028Ω
ID 38A
TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
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ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 60 60 ±20 38 26 152 80 0.53 7 –65 to 175 175
(1) I SD ≤38A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX.
Unit V V V A A A W W/°C V/ns °C °C
(q) Pulse width limited by safe operating area
November 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to ...