SKM800GA125D

SKM800GA125D SEMITRANS® 4 SKM800GA125D Features Homogeneous Si NPT-IGBT VCE(sat) with positive temperature coefficient High short circuit capability, self limiting to 6 x IC Typical Applications* Resonant inverters up to 100 kHz Inductive heating Electronic welders at fsw > 20 kHz Remarks IDC ≤ 500 A limited by terminals Take care of over-voltage caused by stray inductances Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C chiplevel Tj = 25 °C Tj = 125 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 24 mA VGE = 0 V VCE = 1200 V Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 600 A VGE = +15/-15 V RG on = 0.5 Ω RG off = 0.5 Ω Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Eoff Tj = 125 °C Rth(j-c) per IGBT Values 1200 760 530 600 1200 -20 ... 20 10 -40 ... 150 720 500 600 1200 5760 -40 ... 150 500 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C...