SUB75N06-07L

www.DataSheet4U.com SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 0.0085 @ VGS = 4.5 V rDS(on) (W) 0.0075 @ VGS = 10 V ID (A) 75a TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP75N06-07L D S S N-Channel MOSFET Top View SUB75N06-07L www.DataSheet4U.com Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IAR L = 0.1 mH TC = 25_C (TO-220AB and TO-263) EAR PD TJ, Tstg ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Limit "20 75a 55 240 60 280 250c 3.7 –55 to 175 W _C mJ A Unit V Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C (TO-263)d THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70776 S-05111—Rev. F, 10-Dec-00 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB75N06-07L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Ze...