SUB75P03-08

www.DataSheet4U.com SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) –30 rDS(on) (W) 0.008 ID (A) –75a TO-220AB S TO-263 G DRAIN connected to TAB G G D S Top View SUP75P03-08 SUB75P03-08 P-Channel MOSFET D S Top View D ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR www.DataSheet4U.com Symbol VGS Limit "20 –75a –65 –200 –75 280 250d 3.7 –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Document Number: 70772 S-05111—Rev. D, 10-Dec-99 www.vishay.com Free Air (TO-220AB) Symbol RthJA RthJA RthJC Limit 40 62.5 0.6 Unit _C/W 1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB75P03-08 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = –250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –30 V, VGS = 0 V Zero Gate Voltage Drain Cu...