P-Channel MOSFET
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SUP/SUB65P06-20
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
–...
Description
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SUP/SUB65P06-20
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
–60
rDS(on) (W)
0.020
ID (A)
–65a
TO-220AB
S
TO-263
G DRAIN connected to TAB
G D S Top View SUP65P06-20
G
D S D
Top View SUB65P06-20 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR
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Symbol
VGS
Limit
"20 –65a –39 –200 –60 180 250d 3.7 –55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70289 S-05111—Rev. C, 10-Dec-01 www.vishay.com Free Air (TO-220AB)
Symbol
RthJA RthJA RthJC
Limit
40 62.5 0.6
Unit
_C/W
2-1
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www.DataSheet4U.com
SUP/SUB65P06-20
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = –250 ...
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