1C5806

www.DataSheet4U.com SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 930, REV. C 1C5806 ULTRA FAST RECOVERY SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage DC Blocking Voltage Breakdown Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Die Size Max. Junction Temperature Max. Storage Temperature Symbol VRWM VR VBR IF(AV) IFSM TJ Tstg Condition @ 55°C 8.3 ms, sine pulse (1) Max. 150 1.0 35 40 -55 to +175 -55 to +175 Units V A A mil °C °C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 VF2 VF3 IR1 IR2 trr CT Condition 1A, pulse, TJ = 25 °C 2.5A, pulse, TJ = 25 °C 1A, pulse, TJ = 100 °C VR = VRWM, pulse, TJ = 25 °C VR = VRWM, pulse, TJ = 100 °C IF = IR = 0.5A , IRM = 0.05A VR = 10V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.875 0.975 0.800 1.0 50 25 25 Units V V V µA µA ns pF ww w.D a taS hee t4U .co Max. Reverse Current Reverse Recovery Time Max. Junction Capacitance 221 West Industry Court  Deer Park, NY 11729-4681  (631) 586-7600 FAX (631) 242-9798 World Wide Web Site - http://www.sensitron.com E-Mail Address - [email protected] m www.DataSheet4U.com 1C5806 SENSITRON TECHNICAL DATA DATA SHEET 930, REV. C Mechanical Dimensions: In Inches (mm) Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum. Top side metalization: Al - 25 kÅ minimum ANODE 0.024 ± 0.003 (0.610 ± 0.076) 0.040 ± 0.003 (1.016 ± 0.076) Bottom side is cathode, top side is anode....