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N Channel Enchancement Mode MOSFET 3.6A DESCRIPTION
ST2302
The ST2302 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE z 20V/3.6A, RDS(ON) = 80m-ohm @VGS = 4.5V z 20V/2.4A, RDS(ON) = 95m-ohm @VGS = 2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design
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STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET 3.6A
ST2302
ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=70¢J Symbol VDSS VGSS ID IDM IS PD TJ TSTG R£c
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Typical 20 +/-12 2.8 2.2 10 1.6 1.25 0.8 150 -55/150 100
Unit V V A A A W ¢J ¢J ¢J /W
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STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET 3.6A
ST2302
ELECTRICAL CHARACTERISTICS ( Ta = 25¢J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Qg Qgs Qgd Ciss Coss Crss VDS=10V,VGS=4.5V ID¡Ý -3.6A VDS=10V,VGS=0V F=1MHz 5.4 0.65 1.4 340 115 33 12 36 34 10 10 nC Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) Condition VGS=0V,ID=10uA VDS=VGS,ID=50uA VDS=0V,VGS=8V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=55¢J VDS¡Ù 5V,VGS=4.5V VDS¡Ù 5V,VGS=2.5V VGS=4.5V,ID=3.6A VGS=2.5V,ID=3.1A VDS=5V,ID=3.6V IS=-1.6A,VGS=0V Min Typ Max Unit 20 0.45 1.2 V V
100 nA 1 10 6 4 uA A 0.05 0.08 [£ 0.07 0.095 10 S 0.85 1.2 V
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VDD=10V,RL=5.5£[ ID=3.6A,VGEN=4.5V RG=6£[
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STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET 3.6A SOT-23-3L PACKAGE OUTLINE
ST2302
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STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
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N Channel Enchancement Mode MOSFET 3.6A TYPICAL CHARACTERISTICS
ST2302
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N Channel Enchancement Mode MOSFET 3.6A
ST2302
TYPICAL CHARACTERISTICS(25¢J Unless noted)
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