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P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAK STripFET™ II POWER MOSFET
PRELIMINARY DATA TYPE STD30PF03L S...
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P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAK STripFET™ II POWER MOSFET
PRELIMINARY DATA TYPE STD30PF03L STD30PF03L-1
s s
STD30PF03L STD30PF03L-1
VDSS 30 V 30 V
RDS(on) < 0.028Ω < 0.028Ω
ID 24 A 24 A
s s s
TYPICAL RDS(on) = 0.025Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE LOW GATE CHARGE EXTREMELY LOW FIGURE OF MERIT (RDS(on) * Qg)
3 1
2 1
3
DPAK
IPAK
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance and low gate charge.
INTERNAL SCHEMATIC DIAGRAM
s
APPLICATIONS DC-DC CONVERTERS
Symbol VDS VDGR VGS ID (#) ID (#) PTOT Tstg Tj
m
ABSOLUTE MAXIMUM RATINGS
Parameter Value 30 30 ± 16 24 24 96 70 0.47 – 55 to 175 175 Unit V V V A A A W W/°C °C °C
4U
eet
IDM (l)
Sh ata
.co
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C
Derating Factor Storage Temperature Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area (#) Current limited by wire bonding
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
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w.D
May 2002
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STD30PF03L - STD30PF03L-1
THERMAL DATA
Rthj-case Rthj-amb Tj Thermal Resistan...