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P6NK90Z Dataheets PDF



Part Number P6NK90Z
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL MOSFET
Datasheet P6NK90Z DatasheetP6NK90Z Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.56Ω - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z s s s s s s VDSS 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A Pw 140 W 30 W 140 W 3 1 2 TYPICAL RDS(on) = 1.56 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 3 1 TO-22.

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www.DataSheet4U.com www.DataSheet4U.com STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.56Ω - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z s s s s s s VDSS 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A Pw 140 W 30 W 140 W 3 1 2 TYPICAL RDS(on) = 1.56 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 3 1 TO-220FP D2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM ORDERING INFORMATION 4U eet SALES TYPE STP6NK90Z .co MARKING P6NK90Z P6NK90ZFP B6NK90Z m APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL STP6NK90ZFP STB6NK90ZT4 ata Sh ww w.D March 2003 1/12 www.DataSheet4U.com www.DataSheet4U.com STP6NK90Z - STP6NK90ZFP - STB6NK90Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Viso Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature --55 to 150 5.8 3.65 23.2 140 1.12 4000 4.5 2500 Value STP6NK90Z / STB6NK90Z STP6NK90ZFP Unit V V V 5.8 (*) 3.65 (*) 23.2 (*) 30 0.24 A A A W W/°C V V/ns V °C 900 900 ± 30 ( ) Pulse width limited by safe operating area (1) ISD ≤5.8A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (When mounted on minimum Footprint) D2PAK 0.89 60 62.5 300 TO-220FP 4.2 Unit °C/W °C/W °C/W °C Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Max Value 5.8 300 Unit A mJ taS hee t4U .co Symbol BVGSO GATE-SOURCE ZENER DIODE Parameter Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V Gate-Source Breakdown Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. ww w.D a 2/12 m Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) www.DataSheet4U.com www.DataSheet4U.com STP6NK90Z - STP6NK90ZFP - STB6NK90Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 100µA VGS = 10V, ID = 2.9 A 3 3.75 1.56 Min. 900 1 50 ±10 4.5 2 Typ. Max. Unit V µA µA µA V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS =15V, ID = 2.9 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5 1350 130 26 70 Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 720V SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 450 V, ID = 3 A RG = 4.7Ω ,VGS = 10 V (Resistive Load see, Figure 3) VDD = 720 V, ID = 5.8 A, VGS = 10V Min. Typ. 17 20 46.5 8.5 25 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 450 V, ID = 3 A RG = 4.7Ω , VGS = 10 V (Resistive Load see, Figure 3) VDD = 720V, ID = 5.8 A, RG = 4.7Ω , VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 45 20 11 12 20 Max. Unit ns ns ns ns ns taS hee t4U .co Symb.


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