TC55B8128J-15

TOSHIBA 1l:55B8128P/]-12/15/20 SILICON GATE BiCMOS 131,072 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B8128P/J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable.!:!!9h speed operation. The TC55B8128P/J features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. The TC55B8128P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible. The TC55B8128P/J is available in a 400mil width, 32-pin DIP and SOJ suitable for high density surface assembly. Features Fast access time - TC55B8128P/J-12 12ns (max.) - TC55B8128P/J-15 15ns (max.) - TC55B8128P/J-20 20ns (max.) Low power dissipation - Operation: - TC55B8128P/J-12 150mA (max.) - TC55B8128P/J-15 150mA (max.) - TC55B8128P/J-20 150mA (max.) - Standby: 15mA (max.) Single 5V power supply: 5V±10% Fully static operation Inputs and outputs TIL compatible Output buffer control: OE Package: - TC55B8128P: DIP32-P-400 - TC55B8128J: SOJ32-P-400A Pin Names AD - A16 1/01 - 1/08 CE WE OE Voo GND Address Inputs Data Inputs/Outputs Chip Enable Input Write Enable Input Output Enable Input Power (+5V) Ground Pin Connection (Top View) A3 A4 A2 AS Al A6 AO A7 CE ot Vat V08 1102 1107 Voo GNO GNO Voo ...