FB41N15D

SMPS MOSFET PD- 93804A IRFB41N15D IRFS41N15D IRFSL41N15D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 150V RDS(on) max 0.045Ω ID 41A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-220AB IRFB41N15D D2Pak TO-262 IRFS41N15D IRFSL41N15D Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 41 29 164 3.1 200 1.3 ± 30 2.7 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input DC-DC Active Clamp Reset Forward Converter Notes  through … are on page 11 www.irf.com 1 2/14/00 IRFB/IRFS/IRFSL41N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-...