Document
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PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ) APPLICATIONS - Satellite Radio(SDARS, DMB, etc.) antenna LNA - LNA for Micro-wave communication system
ORDERING INFORMATION
Part Number NE3508M04 NE3508M04-T2 Order Number NE3508M04-A NE3508M04-T2-A Quantity 50pcs (Non reel) 3 Kpcs/reel V79 Marking Supplying Form - 8 mm wide emboss taping - Pin1(Source), Pin2(Drain) face the perforation side of the tape
Remark To order evaluation samples, please contact your local NEC sales office. Part number for sample order: NE3508M04
ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C )
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDS VGS ID IG Ptot Tch Tstg
Note
RATINGS 4.0 -3.0 IDSS 400 175 +150 - 65 to +150
UNIT V V mA µA mW °C °C
Note Mounted on 1.08cm2 X 1.0mm(t) glass epoxy PCB
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Document No. P*****EJ0V0PM00 (10th edition) Date Published October 2005 CP(K)
© NEC Compound Semiconductor Devices 2005
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NE3508M04
RECOMMENDED OPERATING CONDITIONS(TA = +25 °C)
PARAMETER
Drain to Source Voltage Drain Current Input Power
SYMBOL
VDS ID Pin
MIN.
-------
TYP.
2 10 ---
MAX.
3 30 0
UNIT
V mA dB m
ELECTRICAL CHARACTERISTICS
PARAMETER
Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Trans conductance Noise Figure Associated Gain Output Power at 1dB Gain Compression Point
TA = +25 °C)
TEST CONDITIONS
VGS=-3V VDS=2V, VGS=0V VDS=2V, ID=100µA VDS=2V, ID=10mA VDS=2V, ID=10mA f 2GHz VDS=3V, ID=30mA(Non-RF) f 2GHz
SYMBOL
IGSO IDSS VGS(off) gm NF Ga Po(1dB)
MIN.
--60 -0.35 100 --12 ---
TYP.
1 90 -0.5 --0.45 14 18
MAX.
20 120 -0.65 --0.9 -----
UNIT
µA mA V mS dB dB dBm
The information in this document is subject to change without notice.
PRELIMINARY PRODUCT INFORMATION
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NE3508M04
TYPICAL CHARACTERISTICS TA = +25 °C)
DRAIN CURRENT vs. GATE to SOURCE VOLTAGE 100
Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0mm(t) )
90 ID (m A) 80 70 60 50 40 30 20 10 0
VDS=2V
Drain Current
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 Gate to Source Voltage VGS (V)
Note) Under examination
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 2.0 1.8 Minimum Noise Figure NFmin (dB) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 frequency (GHz) NFmin Ga VDS=2V, ID=10mA 20 18 16 12 10 8 6 4 2 0
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