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N-CHANNEL 600V - 7Ω - 0.4A TO-92 PowerMesh™II MOSFET
TYPE STQ1HNC60
s s s s s
STQ1HNC60
PRELIMINARY DATA
VDSS 600 V
RDS(on) <8Ω
ID 0.4 A
TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92
DESCRIPTION Using the latest high voltage MESH OVERLAY™II process...
