P50NE10L

www.DataSheet4U.com s s s s s m o .c U 4 t e STP50NE10L e h S N - CHANNEL 100V - 0.020Ω - 50A TO-220 a t STripFET™ POWER MOSFET a .D w w w TYPICAL R = 0.020 Ω ® TYPE VDSS R DS(on) ID STP50NE10L 100 V <0.025 Ω 50 A EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot Drain-source Voltage (V GS = 0) Gate-source Voltage Drain- gate Voltage (R GS = 20 k Ω ) Drain Current (continuous) at T c = 25 C o m o .c U 4 t e e h S a t a .D w w w 3 1 2 DS(on) TO-220 INTERNAL SCHEMATIC DIAGRAM Parameter Value 100 Unit V V V A 100 ± 20 50 35 o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor dv/dt (1 ) Peak Diode Recovery voltage slope Tstg Tj Storage Temperature Max. Operating Junction Temperature () Pulse width limited by safe operating area ...