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K1358

Toshiba Semiconductor
Part Number K1358
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published May 3, 2006
Detailed Description TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Curre...
Datasheet PDF File K1358 PDF File

K1358
K1358

Overview
TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.
5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance - RDS(ON) = 1.
1Ω (Typ.
) • High Forward Transfer Admittance - Yfs = 4.
0S (Typ.
) • Low Leakage Current - IDSS = 300µA (Max.
) @ VDS = 720V • Enhancement-Mode - Vth = 1.
5 ~ 3.
5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ) Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc = 25°C) Channel Temperature Storage Temperature Range VDSS VDGR VGSS ID IDP ...


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