K7M163625M

( DataSheet : www.DataSheet4U.com ) K7M163625M K7M161825M Document Title 512Kx36 & 1Mx18 Flow-Through Nt RAM TM 512Kx36 & 1Mx18-Bit Flow Through Nt RAMTM Revision History Rev. No. 0.0 0.1 0.2 History 1. Initial document. 1. Update ICC & ISB values. 1. Change tOE from 3.5ns to 4.0ns at -8 . 2. Change tOE from 3.5ns to 4.0ns at -9 . 3. Change tOE from 3.5ns to 4.0ns at -10 . 1. Change ISB value from 60mA to 80mA at -8. 2. Change ISB value from 50mA to 70mA at -9 . 3. Change ISB value from 40mA to 60mA at -10 . 1. Changed tCYC from 12ns to 10ns at -9 . 2. Changed DC condition at Icc and parameters Icc ; from 300mA to 320mA at -8, from 260mA to 300mA at -9, from 240mA to 280mA at -10 3. Change pin allocation at 119BGA . - A4 ; from NC to A . - B2 ; from A to CS2 - B4 ; from CKE to ADV - B6 ; from A to CS2 - G4 ; from ADV to A - H4 ; from NC to WE - M4 ; from WE toCKE 1. Final Spec Release. Add access time 7.5ns bin. 1. Remove -10 bin ( tCD=10ns) Nov. 19. 1999 Preliminary Draft Date March. 25. 1999 May. 27. 1999 June. 22. 1999 Remark Preliminary Preliminary Preliminary Sep. 04. 1999 0.3 Preliminary 0.4 1.0 2.0 3.0 Dec. 08. 1999 Nov. 23. 2000 Feb. 23. 2001 Final Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please conta...