K4F641612E

( DataSheet : www.DataSheet4U.com ) Industrial Temperature K4F661612E, K4F641612E 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low pow er) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. CMOS DRAM FEATURES Part Identification - K4F661612E-TI/P(3.3V, 8K Ref.) - K4F641612E-TI/P(3.3V, 4K Ref.) Fast Page Mode operation 2CAS Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) Fast parallel test mode capability Active Power Dissipation Unit : mW Speed -45 -50 -60 8K 324 288 252 4K 468 432 396 LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controlled write JEDEC Standard pinout Available in Plastic TSOP(II) packages +3.3V ±0.3V power supply Industrial Temperature operating ( -40~85°C ) Refresh Cycles Part NO. K4F661612E* K4F641612E Refresh cycle 8K 4K Refresh time Normal 64ms...