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SD1526-08
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION: The ASI SD1526-08 is a Com...
( DataSheet : www.DataSheet4U.com )
SD1526-08
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION: The ASI SD1526-08 is a Common
Base Device Designed for IFF, DME, and Tacan Pulse Applications.
FEATURES INCLUDE:
Gold Metalization Input Matching Low Thermal Resistance
PACKAGE STYLE 250 2L FLG (A)
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 1.0 A 45 V 21.9 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +150 °C 8.0 °C/W
1 = COLLECTOR 2 = EMITTER 3 = BASE
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVCES BVEBO ICES hFE PG
TC = 25 °C
TEST CONDITIONS
IC = 1.0 mA IC = 5.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 28 V VCE = 5.0 V VCE = 28 V
PULSE WIDTH
MINIMUM TYPICAL MAXIMUM
45 45 45 3.5 1.0
UNITS
V V V V mA --dB
IC = 100 mA Pout = 5.0 W =10 µS f = 1025 to 1150 MHz =1.0%
10 9.5
200
DUTY CYCLE
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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