MTP10N10E

MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain−to−source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients. Internal Source−to−Drain Diode Designed to Replace External Zener Transient Suppressor − Absorbs High Energy in the Avalanche Mode − Unclamped Inductive Switching (UIS) Energy Capability Specified at 100°C Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage Drain Current − Continuous Drain Current − Pulsed Total Power Dissipation Derate above 25°C VDSS 100 VDGR 100 VGS ± 20 ID 10 IDM 25 PD 75 0.6 Operating and Storage Temperature Range TJ, Tstg −65 to 150 Thermal Resistance − Junction to Case − Junction to Ambient° RθJC RθJA 1.67 62.5 Maximum Lead Temperature for Sold...