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SDM9435A Dataheets PDF



Part Number SDM9435A
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description P-Channel Enhancement Mode MOSFET
Datasheet SDM9435A DatasheetSDM9435A Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) S DM9435A S amHop Microelectronics C orp. May ,2004 ver 1.1 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 ID -5A R DS (ON) S uper high dense cell design for low R DS (ON ). 50 @ V G S = -10V 90 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-.

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( DataSheet : www.DataSheet4U.com ) S DM9435A S amHop Microelectronics C orp. May ,2004 ver 1.1 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max 5 ID -5A R DS (ON) S uper high dense cell design for low R DS (ON ). 50 @ V G S = -10V 90 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 -5 -25 -1.7 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 www.DataSheet4U.com www.DataSheet4U.com S DM9435A E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.3A V GS = -4.5V, ID = -4.2A V DS = -5V, V GS = -10V V DS = -15V, ID = - 5.3A Min Typ C Max Unit -30 -1 100 -1 -1.5 40 67 -20 9 860 470 180 -3 50 V uA nA V m-ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 90 m-ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance C IS S C OS S CRSS c V DS =-15V, V GS = 0V f =1.0MH Z S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Q gs Q gd 2 V D = -15V ID = -1A V GE N = - 10V R GE N = 6 ohm V DS =-15V,ID =-5.3A,V GS =-10V V DS =-15V,ID =-5.3A,V GS =-4.5V V DS =-15V, ID = -5.3A V GS =-10V 9 10 37 23 15 8.7 3 4 ns ns ns ns nC nC nC nC S DM9435A E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition V GS = 0V, Is =-1.7A Min Typ C Max Unit 5 -0.84 -1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. 25 20 -55 C 25 C T j=125 C 20 16 -V G S =10,9,8,7,6,5V -I D , Drain C urrent (A) -I D , Drain C urrent (A) 15 -V G S =4V 10 -V G S =3V 5 0 12 8 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics R DS (ON) , On-R es is tance(Ohms ) (Normalized) 3000 2500 1.8 1.6 1.4 1.2 1.0 0.8 F igure 2. Trans fer C haracteris tics V G S =-10V I D =-5.3A C , C apacitance (pF ) 2000 1500 1000 500 0 C is s C os s C rs s 0 5 10 15 20 25 30 0.6 -50 0 50 100 150 -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S DM9435A B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 I D =-250uA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 15 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 V G S =0V gF S , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 V DS =-15V 0 0 5 10 15 10.0 1.0 0.4 0.6 0.7 0.9 1.1 1.3 -I DS , Drain-S ource C urrent (A) -V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 -I D , Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 -V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 V DS =-15V I D =-5.3A 10 R (O DS N) L im it 10 10 1s DC ms 0m s 1 0.1 0.03 V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 30 50 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S DM9435A -V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 5 10% S V IN 50% 10% 50% INVE R TE D P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R thJ A (t)=r (t) * R thJ A .


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