( DataSheet : www.DataSheet4U.com )
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF157/D
The RF Power MOS Lin...
( DataSheet : www.DataSheet4U.com )
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF157/D
The RF Power MOS Line
Power Field Effect
Transistor
N–Channel Enhancement Mode
Designed primarily for linear large–signal output stages to 80 MHz. Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ)
MRF157
600 W, to 80 MHz MOS LINEAR RF POWER FET
D
G
S CASE 368–03, STYLE 2
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 125 125 ±40 60 1350 7.7 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.13 Unit °C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
www.DataSheet4U.com
REV 1
1
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) Gate–Body Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 125 — — — — — — 20 5.0 Vdc mAdc µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V,...