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FLL357ME

Part Number	FLL357ME
Manufacturer	Fujitsu Microelectronics
Description	L-band Medium & High Power GAAS Fets
Published	Apr 18, 2006
Detailed Description	( DataSheet : com ) FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: ...
Datasheet	FLL357ME PDF File

Overview

( DataSheet : com ) FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.
5dBm (Typ.
) High Gain: G1dB=11.
5dB (Typ.
) High PAE: ηadd=46% (Typ.
) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.
The performance in multitone environments for Class AB operation make them ideally suited for base station applications.
This device is assembled in hermetic metal/ceramic package.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and c...

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FLL357ME L-band Medium & High Power GAAS Fets - Fujitsu Microelectronics

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