SP8M3

( DataSheet : www.DataSheet4U.com ) SP8M3 Transistors 4V Drive Nch+Pch MOS FET SP8M3 zStructure Silicon N-channel / P-channel MOS FET zExternal dimensions (Unit : mm) SOP8 5.0 0.4 1.75 (5) zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). 1pin mark (8) (1) (4) 3.9 6.0 1.27 0.2 zApplication Power switching, DC / DC converter. Each lead has same dimensions zPackaging specifications Package Type SP8M3 Code Basic ordering unit (pieces) Taping TB 2500 zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. Symbol VDSS VGSS ID IDP∗1 IS ISP ∗1 PD ∗2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Nchannel Pchannel 30 −30 20 −20 ±4.5 ±5.0 ±18 ±20 1.6 −1.6 20 −18 2 150 −55 to +150 Unit V V A A A A W °C °C z...