MB84VD2219xEE

( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-3E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 32M (× 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 s FEATURES Power supply voltage of 2.7 V to 3.3 V High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) Operating Temperature –25 °C to +85 °C Package 73-ball BGA (Continued) s PRODUCT LINE UP Flash Memory Ordering Part No. VCCf*, VCCs* = 3.0 V +0.3 V –0.3 V SRAM MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90 90 90 40 85 85 45 Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) * : Both VCCf and VCCs must be in recommended operation range when either part is beingaccessed. s PACKAGE 73-ball plastic BGA www.DataSheet4U.com (BGA-73P-M01) www.DataSheet4U.com MB84VD2218XEC/EE/2219XEC/EE-90 (Continued) 1.FLASH MEMORY Simultaneous Read/Write operations (dual bank) Miltiple devices available with different bank sizes Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Minimum 100,000 write/erase cycles Sector erase architecture Eight 4 K words and sixty three 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture MB84VD2218X: Top sector MB...