RD38F2030

Intel® Wireless Flash Memory (W18/W30 SCSP) 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features ■ ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit — Top, Bottom or Dual flash parameter configuration Device Voltage — Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V — RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V Device Packaging — 88 balls (8 x 10 active ball matrix); Area: 8x10 mm; Height: 1.2 mm to 1.4 mm PSRAM Performance — 70 ns initial access, 25 ns async page reads at 1.8 V I/O — 70 ns initial access async PSRAM at 1.8V I/O — 88 ns initial access, 30 ns async page reads at 1.8 V I/O — 85 ns initial access, 35 ns async page reads at 3.0 V I/O — 70 ns initial access, 25 ns async page reads at 3.0 V I/O SRAM Performance — 70 ns initial access at 1.8 V or 3.0 V I/O ■ ■ ■ ■ Flash Performance — 65 ns initial access at 1.8 V I/O — 70 ns initial access at 3.0 V I/O — 25 ns async page at 1.8 V or 3.0 V I/O — 14 ns sync reads (tCHQV) at 1.8 V I/O — 20 ns sync reads (tCHQV) at 3.0 V I/O — Enhanced Factory Programming: 3.10 µs/Word (Typ) Flash Architecture — Read-While-Write/Erase — Asymmetrical blocking structure — 4-KWord parameter blocks (Top or Bottom); 32-KWord main blocks — 4-Mbit partition size — 128-bit One-Time Programmable (OTP) Protection Register — Zero-latency block locking — Absolute write protection with block lock using F-VPP and F-WP# Flash Software — Int...