29EE011

W29EE011 128K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The www.DataSheet4U.com device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES Single 5-volt program and erase operations Fast page-write operations − 128 bytes per page − Page program cycle: 10 mS (max.) − Effective byte-program cycle time: 39 µS − Optional software-protected data write Low power consumption − Active current: 25 mA (typ.) − Standby current: 20 µA (typ.) Automatic program timing with internal VPP generation End of program detection − Toggle bit − Data polling Fast chip-erase operation: 50 mS Read access time: 90/150 nS Page program/erase cycles: 1K/10K Ten-year data retention Software and hardware data protection Latched address and data TTL compatible I/O JEDEC standard byte-wide pinouts Available packages: 32-pin 600 mil DIP, TSOP, and PLCC -1- Publication Release Date: July 1999 Revision A12 W29EE011 PIN CONFIGURATIONS BLOCK DIAGRAM NC A16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 VDD WE NC A14 A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 D...