HD1530JL

HD1530JL High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display Features Figure 1. Package PRELIMINARY DATA ■ STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS t(s) ■ LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION duc Applications ro ■ HORIZONTAL DEFLECTION OUTPUT FOR P DIGITAL TV, HDTV, AND HIGH -END te MONITORS le Description so The device uses a Diffused Collector in Planar b technology which adopts ”Enhanced High Voltage O Structure” (EHVS1) that was developed to fit - High-Definition CRT displays. t(s) The new HD product series features improved c silicon efficiency, bringing updated performance to u Horizontal Deflection output stages. 1 TO-264 3 2 Figure 2. Internal Schematic Diagram Obsolete Prod Table 1. Order Codes Part Number Marking Package Packing HD1530JL HD1530JL TO-264 TUBE July 2005 rev.1 1/5 www.st.com 5 HD1530JL Table 2. Absolute Maximum Rating Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1500 V VCEO Collector-Emitter Voltage (IB = 0) 700 V VEBO Emitte-Base Voltage (IC = 0) 10 V IC Collector Current 26 A ICM Collector Peak Current (tP < 5ms) 40 A IB Base Current 10 A IBM Base Peak Current (tP < 5ms) 20 A PTOT Total dissipation at Tc = 25°C 200 W TSTG ) TJ Storage Temperature Max. Operating Junction Temperature -65 to 150 °C 150 °C ct(s Table 3. u Symbol rod RthJC Thermal Da...