MX28F160C3BB

MX28F160C3BT/B 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES Bit Organization: 1,048,576 x 16 Single power supply operation - VCC=VCCQ=2.7~3.6V for read, erase and program operation - VPP=12V for fast production programming - Operating temperature:-40° C~85° C Fast access time : 70/90ns Low power consumption - 9mA typical active read current, f=5MHz - 18mA typical program current (VPP=1.65~3.6V) - 21mA typical erase current (VPP=1.65~3.6V) - 7uA typical standby current under power saving mode Sector architecture - Sector structure : 4Kword x 2 (boot sectors), 4Kword x 6 (parameter sectors), 32Kword x 31 (main sectors) - Top/Bottom Boot Auto Erase and Auto Program - Automatically program and verify data at specified address - Auto sector erase at specified sector Automatic Suspend Enhance - Word write suspend to read - Sector erase suspend to word write - Sector erase suspend to read register report Automatic sector erase, word write and sector lock/ unlock configuration Status Reply - Detection of program and erase operation completion. - Command User Interface (CUI) - Status Register (SR) Data Protection Performance - Include boot sectors and parameter and main sectors to be locked/unlocked 100,000 minimum erase/program cycles Common Flash Interface (CFI) 128-bit Protection Register - 64-bit Unique Device Identifier - 64-bit User-Programmable Latch-up protected to 100mA from -1V to VCC+1V Package type: - 48-pin TSOP (12mm x 20mm) - 48-ball ...