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MC7800A Dataheets PDF



Part Number MC7800A
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description 1.0A Positive Voltage Regulators
Datasheet MC7800A DatasheetMC7800A Datasheet (PDF)

Voltage Regulators – Positive 1.0 A MC7800, MC7800A, MC7800AE, NCV7800 These voltage regulators are monolithic integrated circuits designed as fixed−voltage regulators for a wide variety of applications including local, on−card regulation. These regulators employ internal current limiting, thermal shutdown, and safe−area compensation. With adequate heatsinking they can deliver output currents in excess of 1.0 A. Although designed primarily as a fixed voltage regulator, these devices can be used .

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Voltage Regulators – Positive 1.0 A MC7800, MC7800A, MC7800AE, NCV7800 These voltage regulators are monolithic integrated circuits designed as fixed−voltage regulators for a wide variety of applications including local, on−card regulation. These regulators employ internal current limiting, thermal shutdown, and safe−area compensation. With adequate heatsinking they can deliver output currents in excess of 1.0 A. Although designed primarily as a fixed voltage regulator, these devices can be used with external components to obtain adjustable voltages and currents. Features • Output Current in Excess of 1.0 A • No External Components Required • Internal Thermal Overload Protection • Internal Short Circuit Current Limiting • Output Transistor Safe−Area Compensation • Output Voltage Offered in 1.5%, 2% and 4% Tolerance • Available in Surface Mount D2PAK−3, DPAK−3 and Standard 3−Lead Transistor Packages • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable • These are Pb−Free Devices MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Value Unit Rating Symbol 369C 221A 936 Input Voltage (5.0 − 18 V) VI (24 V) 35 Vdc 40 Power Dissipation Thermal Resistance, Junction−to−Ambient PD RqJA Internally Limited W 92 65 Figure °C/W 15 Thermal Resistance, Junction−to−Case RqJC 5.0 5.0 5.0 °C/W Storage Junction Temperature Tstg Range −65 to +150 °C Operating Junction Temperature TJ +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD_883, Method 3015. Machine Model Method 200 V. DATA SHEET www.onsemi.com 12 3 TO−220 T SUFFIX CASE 221AB Heatsink surface connected to Pin 2. Pin 1. Input D2PAK−3 2. Ground D2T SUFFIX 1 3. Output CASE 936 3 Heatsink surface (shown as terminal 4 in case outline drawing) is connected to Pin 2. 4 12 3 DPAK−3 DT SUFFIX CASE 369C STANDARD APPLICATION Input Cin* 0.33 mF MC78XX Output CO** A common ground is required between the input and the output voltages. The input voltage must remain typically 2.0 V above the output voltage even during the low point on the input ripple voltage. XX, These two digits of the type number indicate nominal voltage. * Cin is required if regulator is located an appreciable distance from power supply filter. ** CO is not needed for stability; however, it does improve transient response. Values of less than 0.1 mF could cause instability. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 23 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking section on page 27 of this data sheet. © Semiconductor Components Industries, LLC, 2014 1 August, 2021 − Rev. 28 Publication Order Number: MC7800/D MC7800, MC7800A, MC7800AE, NCV7800 R18 100 k D1 Zener MC7800 LAT Q17 R24 50 LAT 3 A Q18 Q19 QNPN D2 Zener R19 27.5 k C3 1.0 P Q10 QNPN R22 100 R14 1.0 k R15 R21 680 600 Q7 QNPN R17 9.0 k R1 10.66 k Q5 QNPN 2 Q9 QNPN 2 Q6 R11 QNPN 15 k R2 1.56 k Q8 QNPN Q14 QNPN R5 4.5 k C2 3.0 P Q1 QNPN 6 Q13 QNPN R6 1.0 k Q15 QNPN R20 17500 Q12 QNPN R12 3.0 k R25 R16 R10 6.0 k 600 3340-(3316ACT) R26 3.0 k R9 3.0 k C1 N+ 30 P Q4 QNPN Q2 Q16 QNPN 4 Diode Q3 QNPN SUB Q11 2 R13 11660 R7 R3 R8 14 k 1.8 k 5.0 k Q20 QNPN R23 0.2 Vin R30 18 k R29 9.0 k R28 9.0 k R27 9.0 k Vout 5.01 Sense This device contains 22 active transistors. Figure 1. Representative Schematic Diagram www.onsemi.com 2 MC7800, MC7800A, MC7800AE, NCV7800 ELECTRICAL CHARACTERISTICS (Vin = 10 V, IO = 500 mA, TJ = Tlow to 125°C (Note 1), unless otherwise noted) MC7805B, NCV7805B MC7805C Characteristic Symbol Min Typ Max Min Typ Max Unit Output Voltage (TJ = 25°C) Output Voltage (5.0 mA ≤ IO ≤ 1.0 A, PD ≤ 15 W) 7.0 Vdc ≤ Vin ≤ 20 Vdc 8.0 Vdc ≤ Vin ≤ 20 Vdc Line Regulation (Note 4) 7.5 Vdc ≤ Vin ≤ 20 Vdc, 1.0 A 8.0 Vdc ≤ Vin ≤ 12 Vdc Load Regulation (Note 4) 5.0 mA ≤ IO ≤ 1.0 A 5.0 mA ≤ IO ≤ 1.5 A (TA = 25°C) Quiescent Current Quiescent Current Change 7.0 Vdc ≤ Vin ≤ 25 Vdc 5.0 mA ≤ IO ≤ 1.0 A (TA = 25°C) Ripple Rejection 8.0 Vdc ≤ Vin ≤ 18 Vdc, f = 120 Hz Dropout Voltage (IO = 1.0 A, TJ = 25°C) Output Noise Voltage (TA = 25°C) 10 Hz ≤ f ≤ 100 kHz VO VO Regline Regload IB DIB RR VI − VO Vn 4.8 − 4.75 − − − − − − − − − − 5.0 − 5.0 5.0 1.3 1.3 0.15 3.2 − − 68 2.0 10 5.2 − 5.25 100 50 100 50 8.0 − 0.5 − − − 4.8 4.75 − − − − − − − − 62 − − 5.0 5.0 − 0.5 0.8 1.3 1.3 3.2 0.3 0.08 83 2.0 10 5.2.


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