MRF587

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF587/D The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA High Power Gain — GU(max) = 16.5 dB (Typ) @ f = 500 MHz Ion Implanted All Gold Metal System High fT — 5.5 GHz Low Intermodulation Distortion: TB3 = – 70 dB DIN = 125 dB µV Nichrome Emitter Ballast Resistors MRF587 NF = 3.0 dB @ 0.5 GHz HIGH–FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 50°C Derate above TC = 50°C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 17 34 2.5 200 5.0 33 – 65 to +150 200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C CASE 244A–01, STYLE 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IC = 0, IE = 0.1 mAdc) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 17 34 2.5 — — — — — — — — 50 Vdc Vdc Vdc µAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc, VCE = 5.0 Vdc) NO...