MRF581A

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.5 200 MRF581A 15 Unit Vdc Vdc Vdc mA Thermal Data P D D Total Device Dissipation @ TC = 50º C Derate above 50º C Total Device Dissipation @ TC = 25º C Derate above 25º C Storage Junction Temperature Range -65 to +150 Maximum Junction Temperature 150 ºC ºC 2.5 25 1.25 10 Watts mW/ º C Watts mW/ º C P Tstg TJmax Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. www.DataSheet4U.com MRF581/MRF581A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO IEBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) Emitter Cutoff Current (VCE = 2.0 ...