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MRF5812G

Part Number	MRF5812G
Manufacturer	Advanced Power Technology
Description	Bipolar Junction Transistor
Published	Mar 23, 2006
Detailed Description	MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 d...
Datasheet	MRF5812G PDF File

Overview

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.
5 dB @ 500 MHZ Associated Gain = 15.
5 dB @ 500 MHz Ftau - 5.
0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.
0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.
5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.
25 10 Watts mW/ ºC Advanced Pow...

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