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TC55V8512FT

Part Number	TC55V8512FT
Manufacturer	Toshiba
Description	(TC55V8512J/FT) 8-Bit CMOS SRAM
Published	Mar 23, 2006
Detailed Description	TC55V8512J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DES...
Datasheet	TC55V8512FT PDF File

Overview

TC55V8512J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55V8512J/FT is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 524,288 words by 8 bits.
Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.
3 V power supply.
Chip enable ( CE ) can be used to place the device in a low-power mode, and output enable ( OE ) provides fast memory access.
This device is well suited to cache memory applications where high-speed access and high-speed storage are required.
All inputs and outputs are directly LVTTL compatible.
The TC55V8512J/FT i...

Similar Datasheet

TC55V8512FT (TC55V8512J/FT) 8-Bit CMOS SRAM - Toshiba
TC55V8512J (TC55V8512J/FT) 8-Bit CMOS SRAM - Toshiba

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