JAN2N2920

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 3 October 2005. MIL-PRF-19500/355K 3 July 2005 SUPERSEDING MIL-PRF-19500/355J 8 July 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON, TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. 1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and JANKCA die), figure 4 (JANHCB and JANKCB die). * 1.3 Maximum ratings, unless otherwise specified, TC =+25°C. PT (1) TA = +25°C One section mW 300 Both sections mW 600 PT (2) TC = +25°C One section mW 750 Both sections W 1.25 IC VCBO VCEO VEBO TJ and TSTG mA dc 30 V dc 70 V dc 60 V dc 6 °C -65 to +200 (1) For TA > +25°C, derate linearly 1.71 mW/°C, one section; 3.43 mW/°C, both sections. (2) For TC > +25°C, derate linearly 4.286 mW/°C, ...