SST34HF3284C

32 Mbit Concurrent SuperFlash + 4/8 Mbit (P)SRAM ComboMemory SST34HF3242C / SST34HF3244C SST34HF3282 / SST34HF3284 SST34HF32x4x32Mb CSF + 4/8/16 Mb SRAM (x16) MCP ComboMemory Advance Information FEATURES: Flash Organization: 2M x16 or 4M x8 Dual-Bank Architecture for Concurrent Read/Write Operation – 32 Mbit Top Sector Protection – SST34HF32x4x: 8 Mbit + 24Mbit – SST34HF32x2x: 4 Mbit + 28 Mbit (P)SRAM Organization: – 4 Mbit: 256K x16 – 8 Mbit: 512K x16 Single 2.7-3.3V Read and Write Operations Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption: – Active Current: 25 mA (typical) – Standby Current: 20 µA (typical) Hardware Sector Protection (WP#) – Protects 8 KWord in the smaller bank by holding WP# low and unprotects by holding WP# high Hardware Reset Pin (RST#) – Resets the internal state machine to reading data array Byte Selection for Flash (CIOF pin) – Selects 8-bit or 16-bit mode Sector-Erase Capability – Uniform 2 KWord sectors Flash Chip-Erase Capability Block-Erase Capability – Uniform 32 KWord blocks Erase-Suspend / Erase-Resume Capabilities Read Access Time – Flash: 70 ns – (P)SRAM: 70 ns Security ID Feature – SST: 128 bits – User: 256 bits Latched Address and Data Fast Erase and Program (typical): – Sector-Erase Time: 18 ms – Block-Erase Time: 18 ms – Chip-Erase Time: 35 ms – Program Time: 7 µs Automatic Write Timing – Internal VPP Generation End-of-Write De...