SST28SF040

4 Megabit (512K x 8) SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040 Data Sheet FEATURES: Single Voltage Read and Write Operations – 5.0V-only for the SST28SF040 – 3.0-3.6V for the SST28LF040 – 2.7-3.6V for the SST28VF040 Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Memory Organization: 512K x 8 Sector Erase Capability: 256 bytes per Sector Low Power Consumption – Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 3.0-3.6V/2.7-3.6V – Standby Current: 5 µA (typical) Fast Sector Erase/Byte Program Operation – Byte Program Time: 35 µs (typical) – Sector Erase Time: 2 ms (typical) – Complete Memory Rewrite: 20 sec (typical) Fast Read Access Time – 5.0V-only operation: 120 and 150 ns – 3.0-3.6V operation: 200 and 250 ns – 2.7-3.6V operation: 250 and 300 ns Latched Address and Data Hardware and Software Data Protection – 7-Read-Cycle-Sequence Software Data Protection End of Write Detection – Toggle Bit – Data# Polling TTL I/O Compatibility JEDEC Standard – Flash EEPROM Pinouts Packages Available – 32-Pin PDIP – 32-Pin PLCC – 32-Pin TSOP (8mm x 20mm) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 PRODUCT DESCRIPTION The SST28SF040/28LF040/28VF040 are 512K x 8 bit CMOS sector erase, byte program EEPROMs. The SST28SF040/28LF040/28VF040 are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector a...