STE40NC60

N-CHANNEL 600V - 0.098Ω - 40A ISOTOP PowerMesh™ II MOSFET TYPE STE40NC60 n n n n n STE40NC60 VDSS 600V RDS(on) < 0.13Ω ID 40 A TYPICAL RDS(on) = 0.098 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ISOTOP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l ) PTOT dv/dt (1) VISO Tstg Tj May 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature Value 600 600 ± 30 40 23 160 460 3.68 3 2500 –65 to 150 150 (1) ISD≤ 40A, di/dt≤ 100 A/µs, VDD≤ 24V, Tj ≤TjMAX Unit V V V A A A W W/ °C V/ns V °C °C 1/8 ()Pulse width limited by safe operating area www.DataSheet4U.com STE40NC60 THERMAL DATA Rthj-case Rthc-h Thermal Resi...