MTP3N60 MTP3N60FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE MTP3N60 MTP3N60FI www.DataSheet4U.com
s s s s s...
MTP3N60 MTP3N60FI
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
TYPE MTP3N60 MTP3N60FI www.DataSheet4U.com
s s s s s
V DSS 600 V 600 V
R DS( on) < 2.5 Ω < 2.5 Ω
ID 3.9 A 2.5 A
TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2 1 2
3
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CHOPPER
REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter MTP3N60 VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value MTP3N60FI 600 600 ± 20 3.9 2.4 14 100 0.8 -65 to 150 150 2.5 1.5 14 35 0.28 2000
Unit
V V V A A A W W/o C V
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C C
() Pulse width limited by safe operating area
November 1996
1/10
MTP3N60/FI
THERMAL DATA
TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.25 62.5 0.5 300 ISOWATT220 3.57
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AV...